? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m 500 v v gsm transient 40 v v gsm continuous 30 v i d25 t c = 25 c 2.4 a i dm t c = 25 c, pulse width limited by t jm 4.5 a i ar t c = 25 c 2.4 a e ar t c = 25 c8mj e as t c = 25 c 100 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 50 p d t c = 25 c55w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 4 g to-252 0.8 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 25 a 3.0 5.5 v i gss v gs = 30 v, v ds = 0 v 50 na i dss v ds = v dss 1 a v gs = 0 v t j = 125 c50 a r ds(on) v gs = 10 v, i d = 0.5 i d25 , note 1 3.75 polarhv tm power mosfet n-channel enhancement mode avalanche rated features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density ixtp 2r4n50p ixty 2r4n50p v dss = 500 v i d25 = 2.4 a r ds(on) 3.75 ds99445e(04/06) g = gate d = drain s = source tab = drain to-220 (ixtp) d (tab) g s to-252 aa (ixty) g s (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixtp 2r4n50p ixty 2r4n50p symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , note 1 1.5 2.5 s c iss 240 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 31 pf c rss 4pf t d(on) 24 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 29 ns t d(off) r g = 50 (external) 65 ns t f 28 ns q g(on) 6.1 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 1.8 nc q gd 2.9 nc r thjc 2.25 c/w r thcs (to-220) 0.25 c/w source-drain diode characteristic values t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 2.4 a i sm repetitive 7.0 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = 2.4 a, -di/dt = 100 a/ s 400 ns v r = 100 v; v gs = 0 v note 1: pulse test, t 300 s, duty cycle d 2 % ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 to-220 (ixtp) outline pins: 1 - gate 2 - drain 3 - source 4 - drain to-252 aa (ixty) outline dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 pins: 1 - gate 2 - drain 3 - source 4 - drain
? 2006 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. output characteristics @ 125 o c 0 0.4 0.8 1.2 1.6 2 2.4 0 2 4 6 8 10121416182022 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 1. output characteristics @ 25 o c 0 0.4 0.8 1.2 1.6 2 2.4 012345678910 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 2.4a i d = 1.2a v gs = 10v fig. 6. drain current vs. case temperature 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 00.511.522.533.544.5 i d - amperes r d s ( o n ) - normalize d t j = 125 o c t j = 25 o c v gs = 10v ixtp 2r4n50p ixty 2r4n50p
ixys reserves the right to change limits, test conditions, and dimensions. ixtp 2r4n50p ixty 2r4n50p fig. 11. capacitance 1 10 100 1000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 01234567 q g - nanocoulombs v g s - volts v ds = 250v i d = 1.2a i g = 10m a fig. 7. input adm ittance 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 0.5 1 1.5 2 2.5 3 3.5 4 00.511.522.533.54 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 1 2 3 4 5 6 7 0.40.5 0.60.70.80.9 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 0.1 1 10 10 100 1000 v d s - volts i d - amperes 10 0 s 1m s dc t j = 150 o c t c = 25 o c r ds(on) limit 10 m s 25s
? 2006 ixys all rights reserved ixtp 2r4n50p ixty 2r4n50p fig. 13. m axim um transient therm al resistance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - o c / w
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